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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC350 FEATURES Power dissipation PCM : 0.3 W Tamb=25ae(c) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae unless TRANSISTOR (PNP) TO 92 1.EMITTER 2. BASE 3. COLLECTOR 123 otherwise specified(c) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCEsat VBEsat Test conditions MIN -50 -45 -5 TYP MAX UNIT V V V Ic= -100|I IE=0 A IC= -1mA, IB=0 IE= -100|I AIC=0 VCB=-50V, IE=0 VCE=-35V, IB=0 VEB= -3V, IC=0 VCE=-5 V, IC= -2mA IC= -10mA, IB= -1mA IC= -10mA, IB= -1mA VCE=-5 V,IC=-10mA, f=30MHz -0.1 -0.1 -0.1 40 450 -0.3 -1 125 |I A |I A |I A V V MHz fT TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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